ISRO ICRB Scientist/Engineer 'SC' Electronics & Communication (ECE) ICRB Pattern

ISRO Scientist/Engineer ECE Solved Papers

Practice previous years' questions for Electromagnetics, Antennas, Microwave Engineering, Digital Communication, Signals & Systems, Analog Electronics, VLSI, and Optical Communications.

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Marking scheme: +3.00 positive, -0.75 negative (ICRB Standard).

495 Questions Page 11 of 20
251

Which of the following functions have a jump discontinuity at $x=0$?

ISRO Scientist/Engineer 'SC' Electronics 2010 Engineering Mathematics
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252

What would be the output of the following circuit, if a positive going unipolar pulse with an amplitude greater than Vref, is applied at the input?

ViR1D1+-U1OUTVCC0VrefR2Vo
ISRO Scientist/Engineer 'SC' Electronics 2010 Analog Circuits
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253

What is the output voltage across the 900 ohm load in the circuit given below?

5001K900+-35 V20V10V
ISRO Scientist/Engineer 'SC' Electronics 2010 Analog Circuits
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254

What is the transfer function of the network given below?

11H1F10V1V2
ISRO Scientist/Engineer 'SC' Electronics 2010 Network Theory
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255

A voltage regulator having $Vref=1.25V$ needs to generate 5V output. Assume that $Iadj=100\mu A$ and $R1=10kohm$. What should be value of R2?

Vi2U1INOUTADJ3VoR1R201Vref
ISRO Scientist/Engineer 'SC' Electronics 2010 Analog Circuits
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256

$1\text{ cm}^3$ of pure Germanium at $20^\circ\text{C}$ contains about $4.2 \times 10^{22}$ atoms, $2.5 \times 10^{13}$ free electrons and $2.5 \times 10^{13}$ holes. 0.001% of Arsenic doping donates an extra $10^{17}$ free electrons in the same volume. The approximate number of holes in one $\text{cm}^3$ in the doped semiconductor under equilibrium condition is :

ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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257

Measurement of Hall coefficient enables the determination of :

ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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258

Silicon is not suitable for fabrication of light emitting diodes because it is :

ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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259

The band gap of elements arranged in ascending order is :

ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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260

The following statements are made for NMOS & PMOS

  1. The carrier mobility in NMOS is higher
  2. PMOS require less area than NMOS
  3. NMOS circuits are smaller than PMOS
  4. PMOS are faster in switching.

Of these, the true statements are:

ISRO Scientist/Engineer 'SC' Electronics 2012 VLSI Design
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261

The following statements are made for FETS

  1. In n-channel depletion mode MOS in the active region, the control voltage $V_{GS}$ is negative.
  2. NMOS in depletion mode is cut off for $V_{GS}=0$
  3. NMOS in enhance mode is cut off for $V_{GS}=0$
  4. There is no path between source and drain in the enhancement mode

Of these, the true statements are:

ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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262

Special handling precautions should be taken when working with MOS devices. The statement which is not true is :

ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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263

If the input to the circuit of Figure is a sine wave, then the output will be:

Vi+-Vo
ISRO Scientist/Engineer 'SC' Electronics 2012 Analog Circuits
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264

A high gain OpAmp has $R_f = 10^5\;\Omega$ & $R_i = 10^3\;\Omega$. The correct statement is :

ISRO Scientist/Engineer 'SC' Electronics 2012 Analog Circuits
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265

For various types of oscillators, the correct statement is:

ISRO Scientist/Engineer 'SC' Electronics 2012 Analog Circuits
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266

For Butterworth & Chebyshev filters, the correct statement is :

ISRO Scientist/Engineer 'SC' Electronics 2012 Analog Circuits
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267

In a feedback series regulator circuit, the output voltage is regulated by controlling the

ISRO Scientist/Engineer 'SC' Electronics 2012 Power Electronics
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268

In a fullwave rectifier circuit with centre tap transformer, if voltage between one end of secondary winding and centre tap is 300V peak, then PIV (peak inverse voltage) is

ISRO Scientist/Engineer 'SC' Electronics 2012 Analog Circuits
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269

The rms value of the periodic waveform as shown in Figure is

tA-AT/2T
ISRO Scientist/Engineer 'SC' Electronics 2012 Network Theory
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270

The approximate equivalent resistance between terminals A and B for the following infinite ladder network comprising of 1 Ω & 2 Ω resistors is :

AB1 Ω1 Ω1 Ω2 Ω2 Ω2 ΩTo infinity
ISRO Scientist/Engineer 'SC' Electronics 2012 Network Theory
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271

If the step response to the input step amplitude of 1 V is given by $V_o(t)=(1-e^{-t/RC})$, the network can be represented by :

ISRO Scientist/Engineer 'SC' Electronics 2012 Network Theory
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272

For a parallel RC circuit as shown in figure, $R=20~\Omega$ & $C=0.9~\text{pF}$, which is to be matched to $50~\Omega$ over a bandwidth,

LOSSLESSMATCHINGCIRCUITRCΓ

$$\int_{0}^{\infty} \ln\frac{1}{|\Gamma|} \, d\omega \le \frac{\pi}{R \cdot C}$$

The circuit has to be matched over 6 GHz to 18 GHz. What is the very best Γ that can be achieved:

ISRO Scientist/Engineer 'SC' Electronics 2012 Microwave Engineering
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273

In this circuit, V is a sinusoid input with freq f, current i contains:

i+-V_ACDiodeDiode
ISRO Scientist/Engineer 'SC' Electronics 2012 Electronic Devices
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274

The effect of phase error of local oscillator on spectral components in coherent detection of SSB Amplitude modulated signal is:

ISRO Scientist/Engineer 'SC' Electronics 2012 Communications Engineering
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275

The maximum transmission power efficiency of DSB-C Amplitude Modulation is:

ISRO Scientist/Engineer 'SC' Electronics 2012 Communications Engineering
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